Infineon 2 MB SPI FRAM 8-Pin DFN

Bulkkorting beschikbaar

Subtotaal (1 tube van 74 eenheden)*

€ 1.084,248

(excl. BTW)

€ 1.311,946

(incl. BTW)

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  • Verzending vanaf 25 mei 2026
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Aantal stuks
Per stuk
Per tube*
74 - 74€ 14,652€ 1.084,25
148 +€ 13,813€ 1.022,16

*prijsindicatie

RS-stocknr.:
188-5422
Fabrikantnummer:
FM25V20A-DG
Fabrikant:
Infineon
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Merk

Infineon

Memory Size

2MB

Product Type

FRAM

Organisation

256k x 8 Bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Maximum Clock Frequency

40MHz

Mount Type

Surface

Package Type

DFN

Pin Count

8

Height

0.75mm

Length

4.5mm

Width

4 mm

Standards/Approvals

No

Maximum Operating Temperature

85°C

Minimum Operating Temperature

-40°C

Number of Bits per Word

8

Minimum Supply Voltage

2V

Maximum Supply Voltage

3.6V

Number of Words

256K

Automotive Standard

AEC-Q100

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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