Infineon 64kbit SPI FRAM Memory 8-Pin SOIC, FM25CL64B-G
- RS-stocknr.:
- 125-4222P
- Fabrikantnummer:
- FM25CL64B-G
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 25,10
(excl. BTW)
€ 30,40
(incl. BTW)
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| 50 - 98 | € 2,445 |
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| 500 + | € 2,09 |
*prijsindicatie
- RS-stocknr.:
- 125-4222P
- Fabrikantnummer:
- FM25CL64B-G
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Memory Size | 64kbit | |
| Organisation | 8K x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 20ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.48mm | |
| Length | 4.97mm | |
| Maximum Operating Supply Voltage | 3.65 V | |
| Width | 3.98mm | |
| Height | 1.48mm | |
| Maximum Operating Temperature | +85 °C | |
| Number of Words | 8K | |
| Minimum Operating Temperature | -40 °C | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Automotive Standard | AEC-Q100 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Memory Size 64kbit | ||
Organisation 8K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 20ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.48mm | ||
Length 4.97mm | ||
Maximum Operating Supply Voltage 3.65 V | ||
Width 3.98mm | ||
Height 1.48mm | ||
Maximum Operating Temperature +85 °C | ||
Number of Words 8K | ||
Minimum Operating Temperature -40 °C | ||
Number of Bits per Word 8bit | ||
Minimum Operating Supply Voltage 2.7 V | ||
Automotive Standard AEC-Q100 | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.