Infineon 64kbit SPI FRAM Memory 8-Pin DFN, FM25CL64B-DG
- RS-stocknr.:
- 125-4221P
- Fabrikantnummer:
- FM25CL64B-DG
- Fabrikant:
- Infineon
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€ 18,60
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€ 22,50
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| 50 - 98 | € 1,805 |
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| 500 + | € 1,55 |
*prijsindicatie
- RS-stocknr.:
- 125-4221P
- Fabrikantnummer:
- FM25CL64B-DG
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Memory Size | 64kbit | |
| Organisation | 8K x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 20ns | |
| Mounting Type | Surface Mount | |
| Package Type | DFN | |
| Pin Count | 8 | |
| Dimensions | 4 x 4.5 x 0.7mm | |
| Length | 4.5mm | |
| Width | 4mm | |
| Maximum Operating Supply Voltage | 3.65 V | |
| Height | 0.7mm | |
| Maximum Operating Temperature | +85 °C | |
| Number of Bits per Word | 8bit | |
| Automotive Standard | AEC-Q100 | |
| Number of Words | 8K | |
| Minimum Operating Temperature | -40 °C | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Memory Size 64kbit | ||
Organisation 8K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 20ns | ||
Mounting Type Surface Mount | ||
Package Type DFN | ||
Pin Count 8 | ||
Dimensions 4 x 4.5 x 0.7mm | ||
Length 4.5mm | ||
Width 4mm | ||
Maximum Operating Supply Voltage 3.65 V | ||
Height 0.7mm | ||
Maximum Operating Temperature +85 °C | ||
Number of Bits per Word 8bit | ||
Automotive Standard AEC-Q100 | ||
Number of Words 8K | ||
Minimum Operating Temperature -40 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
200 μA active current at 1 MHz
3 μA (typ) standby current
Low-voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
200 μA active current at 1 MHz
3 μA (typ) standby current
Low-voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.