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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Memory Size	4kbit
	Organisation	512 x 8 bit
	Interface Type	Serial-2 Wire, Serial-I2C
	Data Bus Width	8bit
	Maximum Random Access Time	3000ns
	Mounting Type	Surface Mount
	Package Type	SOIC
	Pin Count	8
	Dimensions	4.97 x 3.98 x 1.48mm
	Length	4.97mm
	Width	3.98mm
	Maximum Operating Supply Voltage	5.5 V
	Height	1.48mm
	Maximum Operating Temperature	+85 °C
	Number of Words	512
	Minimum Operating Temperature	-40 °C
	Number of Bits per Word	8bit
	Minimum Operating Supply Voltage	4.5 V
	Automotive Standard	AEC-Q100

	Alles selecteren
	Merk Infineon
	Memory Size 4kbit
	Organisation 512 x 8 bit
	Interface Type Serial-2 Wire, Serial-I2C
	Data Bus Width 8bit
	Maximum Random Access Time 3000ns
	Mounting Type Surface Mount
	Package Type SOIC
	Pin Count 8
	Dimensions 4.97 x 3.98 x 1.48mm
	Length 4.97mm
	Width 3.98mm
	Maximum Operating Supply Voltage 5.5 V
	Height 1.48mm
	Maximum Operating Temperature +85 °C
	Number of Words 512
	Minimum Operating Temperature -40 °C
	Number of Bits per Word 8bit
	Minimum Operating Supply Voltage 4.5 V
	Automotive Standard AEC-Q100

FM24C04B-G Datasheet

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K x 16
Configurable as 256 K x 8 using UB and LB
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Page mode operation to 30-ns cycle time
Advanced high-reliability ferroelectric process
SRAM compatible
Industry-standard 128 K x 16 SRAM pinout
60-ns access time, 90-ns cycle time
Advanced features
Software-programmable block write-protect
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Low power consumption
Active current 7 mA (typ)
Standby current 120 μA (typ)
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
44-pin thin small outline package (TSOP) Type II

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Infineon 4kbit Serial-2 Wire, Serial-I2C FRAM Memory 8-Pin SOIC, FM24C04B-G

FRAM, Cypress Semiconductor