Infineon NOR 1 GB Parallel GL-T MIRRORBITTM Flash Parallel 48-Pin TSOP-56, S29GL01GT10FHI010
- RS-stocknr.:
- 273-5428
- Fabrikantnummer:
- S29GL01GT10FHI010
- Fabrikant:
- Infineon
Subtotaal (1 tray van 180 eenheden)*
€ 1.551,06
(excl. BTW)
€ 1.876,86
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 07 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 180 + | € 8,617 | € 1.551,06 |
*prijsindicatie
- RS-stocknr.:
- 273-5428
- Fabrikantnummer:
- S29GL01GT10FHI010
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | GL-T MIRRORBITTM Flash Parallel | |
| Memory Size | 1GB | |
| Interface Type | Parallel | |
| Package Type | TSOP-56 | |
| Pin Count | 48 | |
| Maximum Clock Frequency | 5MHz | |
| Cell Type | NOR | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 2.7V | |
| Timing Type | Asynchronous | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q100 Grade 2 & 3 | |
| Supply Current | 100mA | |
| Maximum Random Access Time | 130ns | |
| Series | S29GL | |
| Number of Bits per Word | 16 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type GL-T MIRRORBITTM Flash Parallel | ||
Memory Size 1GB | ||
Interface Type Parallel | ||
Package Type TSOP-56 | ||
Pin Count 48 | ||
Maximum Clock Frequency 5MHz | ||
Cell Type NOR | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 2.7V | ||
Timing Type Asynchronous | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q100 Grade 2 & 3 | ||
Supply Current 100mA | ||
Maximum Random Access Time 130ns | ||
Series S29GL | ||
Number of Bits per Word 16 | ||
The Infineon Flash Memory is fabricated on 45 nm process technology. These devices offer a fast page access time as fast as 15 ns, with a corresponding random access time as fast as 100 ns. They feature a write buffer that allows a maximum of 256 words or 512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms.
20 year data retention
Advanced sector protection
512 byte programming buffer
100000 program and erase cycles
Asynchronous 32 byte page read
Common flash interface parameter table
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