Infineon NOR 128Mbit Quad-SPI Flash Memory 8-Pin WSON, S25FL128LAGNFI010
- RS-stocknr.:
- 181-1563
- Fabrikantnummer:
- S25FL128LAGNFI010
- Fabrikant:
- Infineon
Subtotaal (1 tray van 490 eenheden)*
€ 951,09
(excl. BTW)
€ 1.151,01
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 14 december 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 490 + | € 1,941 | € 951,09 |
*prijsindicatie
- RS-stocknr.:
- 181-1563
- Fabrikantnummer:
- S25FL128LAGNFI010
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Memory Size | 128Mbit | |
| Interface Type | Quad-SPI | |
| Package Type | WSON | |
| Pin Count | 8 | |
| Organisation | 16M x 8 bit | |
| Mounting Type | Surface Mount | |
| Cell Type | NOR | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Block Organisation | Symmetrical | |
| Length | 5.28mm | |
| Height | 1.9mm | |
| Width | 5.28mm | |
| Dimensions | 5.28 x 5.28 x 1.9mm | |
| Automotive Standard | AEC-Q100 | |
| Maximum Operating Temperature | +85 °C | |
| Number of Bits per Word | 8bit | |
| Number of Words | 16M | |
| Series | S25FL | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Random Access Time | 8ns | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Memory Size 128Mbit | ||
Interface Type Quad-SPI | ||
Package Type WSON | ||
Pin Count 8 | ||
Organisation 16M x 8 bit | ||
Mounting Type Surface Mount | ||
Cell Type NOR | ||
Minimum Operating Supply Voltage 2.7 V | ||
Maximum Operating Supply Voltage 3.6 V | ||
Block Organisation Symmetrical | ||
Length 5.28mm | ||
Height 1.9mm | ||
Width 5.28mm | ||
Dimensions 5.28 x 5.28 x 1.9mm | ||
Automotive Standard AEC-Q100 | ||
Maximum Operating Temperature +85 °C | ||
Number of Bits per Word 8bit | ||
Number of Words 16M | ||
Series S25FL | ||
Minimum Operating Temperature -40 °C | ||
Maximum Random Access Time 8ns | ||
2-Mbit ferroelectric random access memory (F-RAM) logically
organized as 256 K ´ 8
High-endurance 10 trillion (1014) read/writes
121-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 33 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
3 mA active current at 33 MHz
400 A standby current
12 A sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Extended temperature: –40 °C to +105 °C
8-pin thin dual flat no leads (DFN) package
organized as 256 K ´ 8
High-endurance 10 trillion (1014) read/writes
121-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 33 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
3 mA active current at 33 MHz
400 A standby current
12 A sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Extended temperature: –40 °C to +105 °C
8-pin thin dual flat no leads (DFN) package
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