Microchip 4Mbit Parallel Flash Memory 32-Pin PDIP, SST39SF040-70-4C-PHE
- RS-stocknr.:
- 352-119
- Fabrikantnummer:
- SST39SF040-70-4C-PHE
- Fabrikant:
- Microchip
Subtotaal (1 eenheid)*
€ 3,85
(excl. BTW)
€ 4,66
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 150 stuk(s) vanaf 08 december 2025
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 3,85 |
*prijsindicatie
- RS-stocknr.:
- 352-119
- Fabrikantnummer:
- SST39SF040-70-4C-PHE
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Memory Size | 4Mbit | |
| Interface Type | Parallel | |
| Package Type | PDIP | |
| Pin Count | 32 | |
| Organisation | 4M x 8 | |
| Cell Type | Split Gate | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Memory Size 4Mbit | ||
Interface Type Parallel | ||
Package Type PDIP | ||
Pin Count 32 | ||
Organisation 4M x 8 | ||
Cell Type Split Gate | ||
The Microchip CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF040 writes (Program or Erase) with a 4.5 to 5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories.
Superior reliability with 100000 cycles endurance typical
Greater than 100 years data retention
Low power consumption at 14 MHz
Active current 10 mA typical
Standby current 30 μA typical
Sector-erase capability with uniform 4 Kbyte sectors
Fast read access time 55 ns and 70 ns
Latched address and data
Automatic write timing with internal VPP generation
Greater than 100 years data retention
Low power consumption at 14 MHz
Active current 10 mA typical
Standby current 30 μA typical
Sector-erase capability with uniform 4 Kbyte sectors
Fast read access time 55 ns and 70 ns
Latched address and data
Automatic write timing with internal VPP generation
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