Alliance Memory NOR 128Mbit Serial Flash Memory 8-Pin WSON, AS25F3128MQ-6WINTR
- RS-stocknr.:
- 338-525
- Fabrikantnummer:
- AS25F3128MQ-6WINTR
- Fabrikant:
- Alliance Memory
Subtotaal (1 rol van 4000 eenheden)*
€ 5.568,00
(excl. BTW)
€ 6.736,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 30 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 4000 + | € 1,392 | € 5.568,00 |
*prijsindicatie
- RS-stocknr.:
- 338-525
- Fabrikantnummer:
- AS25F3128MQ-6WINTR
- Fabrikant:
- Alliance Memory
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Alliance Memory | |
| Memory Size | 128Mbit | |
| Interface Type | Serial | |
| Package Type | WSON | |
| Pin Count | 8 | |
| Cell Type | NOR | |
| Alles selecteren | ||
|---|---|---|
Merk Alliance Memory | ||
Memory Size 128Mbit | ||
Interface Type Serial | ||
Package Type WSON | ||
Pin Count 8 | ||
Cell Type NOR | ||
- Land van herkomst:
- TW
The Alliance Memory 128M-bit interface Flash memory device designed for operating on a single power supply from 2.7 to 3.6V with current consumption as low as
0.2μA at deep power down in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device with its page erase granularity is ideal for data storage as well, eliminating the need for additional data storage devices. There are 65,536 programmable pages (256-Bytes each) configured in the device and up to 256 Bytes can be programmed at a time. The groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase) allow Pages to be erased. The device has 4,096 erasable sectors and 256 erasable blocks respectively. The small 4KB sectors afford greater flexibility for applications requiring data and parameter to be stored.
0.2μA at deep power down in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device with its page erase granularity is ideal for data storage as well, eliminating the need for additional data storage devices. There are 65,536 programmable pages (256-Bytes each) configured in the device and up to 256 Bytes can be programmed at a time. The groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase) allow Pages to be erased. The device has 4,096 erasable sectors and 256 erasable blocks respectively. The small 4KB sectors afford greater flexibility for applications requiring data and parameter to be stored.
Speed 166MHz
Active read current max 4mA
Program current max 15mA
Erase current max 15mA
8L WSON package 5x6mm
Active read current max 4mA
Program current max 15mA
Erase current max 15mA
8L WSON package 5x6mm
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