NXP Reference Circuit MRFX1K80H Development Board for Aerospace, Broadcast, Industrial, Medical 27MHz MRFX1K80H-27MHZ
- RS-stocknr.:
- 288-4986
- Artikelnummer Distrelec:
- 302-47-050
- Fabrikantnummer:
- MRFX1K80H-27MHZ
- Fabrikant:
- NXP
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 288-4986
- Artikelnummer Distrelec:
- 302-47-050
- Fabrikantnummer:
- MRFX1K80H-27MHZ
- Fabrikant:
- NXP
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | NXP | |
| Classification | Development Board | |
| Kit Classification | Development Board | |
| For Use With | Aerospace, Broadcast, Industrial, Medical | |
| Featured Device | MRFX1K80H | |
| Frequency | 27MHz | |
| Kit Name | Reference Circuit | |
| Alles selecteren | ||
|---|---|---|
Merk NXP | ||
Classification Development Board | ||
Kit Classification Development Board | ||
For Use With Aerospace, Broadcast, Industrial, Medical | ||
Featured Device MRFX1K80H | ||
Frequency 27MHz | ||
Kit Name Reference Circuit | ||
- Land van herkomst:
- US
The high ruggedness N-Channel enhancement-mode lateral MOSFET transistor designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. With unmatched input and output design, this transistor supports a frequency range from 1.8 to 400 MHz, making it ideal for a wide range of applications.
Designed for high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications
Unmatched input and output design supports a wide frequency range from 1.8 to 400 MHz
Wideband RF power capability for excellent performance
High breakdown voltage for enhanced reliability
Integrated ESD protection for improved Class C operation
Suitable for use in high VSWR applications with excellent durability
Unmatched input and output design supports a wide frequency range from 1.8 to 400 MHz
Wideband RF power capability for excellent performance
High breakdown voltage for enhanced reliability
Integrated ESD protection for improved Class C operation
Suitable for use in high VSWR applications with excellent durability
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