Infineon Ultra Low Current Low Noise Amplifier for L2/L5 GNSS Applications Diode Low Noise Amplifier Evaluation Board
- RS-stocknr.:
- 273-2072
- Fabrikantnummer:
- EVALBGA125N6TOBO1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 197,65
(excl. BTW)
€ 239,16
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Beperkte voorraad
- Plus verzending 4 stuk(s) vanaf 15 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 197,65 |
| 5 - 9 | € 187,78 |
| 10 + | € 182,83 |
*prijsindicatie
- RS-stocknr.:
- 273-2072
- Fabrikantnummer:
- EVALBGA125N6TOBO1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Classification | GNSS Module | |
| RF Technology | Low Noise Amplifier | |
| Technology | Amplifier & Linear | |
| Kit Classification | Evaluation Board | |
| For Use With | Mobile Cellular | |
| Featured Device | Diode | |
| Frequency | 1300MHz | |
| Kit Name | Ultra Low Current Low Noise Amplifier for L2/L5 GNSS Applications | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Classification GNSS Module | ||
RF Technology Low Noise Amplifier | ||
Technology Amplifier & Linear | ||
Kit Classification Evaluation Board | ||
For Use With Mobile Cellular | ||
Featured Device Diode | ||
Frequency 1300MHz | ||
Kit Name Ultra Low Current Low Noise Amplifier for L2/L5 GNSS Applications | ||
- Land van herkomst:
- DE
Infineon Communication & Wireless Development Tool, Low Noise Amplifier RF Technology, GNSS Module Classification - EVALBGA125N6TOBO1
This communication and wireless development tool is an ultra low current low noise amplifier designed specifically for L2/L5 GNSS applications. It operates within the frequency range of 1164 to 1300 MHz and features dimensions of 0.7 x 1.1 mm². The device is particularly beneficial for mobile cellular IoT solutions, ensuring exceptional performance while minimising power consumption.
Features & Benefits
• Ultra low power consumption of just 1.3mA enhances battery life
• High insertion power gain of 20dB optimises signal strength
• Low noise figure of 0.80dB ensures improved sensitivity
• Compact, RoHS/WEEE compliant package supports diverse requirements
• High insertion power gain of 20dB optimises signal strength
• Low noise figure of 0.80dB ensures improved sensitivity
• Compact, RoHS/WEEE compliant package supports diverse requirements
Applications
• Ideal for enhancing GNSS signal sensitivity in wearables
• Suitable for integration into mobile cellular technology
• Utilised in high-frequency requiring low noise solutions
• Designed for evaluation boards targeting GNSS application development
• Supports application development leveraging RF technology solutions
• Suitable for integration into mobile cellular technology
• Utilised in high-frequency requiring low noise solutions
• Designed for evaluation boards targeting GNSS application development
• Supports application development leveraging RF technology solutions
What benefits does operating at a frequency range of 1164 to 1300 MHz provide for my project?
Utilising this frequency range enhances GNSS signal sensitivity, ensuring reliable positioning and navigation, which is especially critical for mobile and wearable devices.
How does the low power consumption of 1.3 mA impact device performance?
The ultra low current consumption significantly extends battery life in portable devices, making it ideal for applications where power efficiency is paramount.
What advantages does the wide supply voltage range offer for design?
The flexibility of a supply voltage range from 1.1V to 2.8V supports various system designs and increases compatibility with different power sources, accommodating diverse applications.
How does the low noise figure improve the device's effectiveness in GNSS applications?
A low noise figure reduces background noise, enhancing signal clarity and allowing for better detection of weak signals in challenging environments, ensuring reliable performance.
What ESD protection mechanisms are integrated to ensure the device's durability?
The built-in 2kV HBM ESD protection assists in safeguarding the device from electrostatic discharge risks, thereby enhancing its reliability in various operational environments.
Gerelateerde Links
- Infineon Ultra Low Current Low Noise Amplifier for GNSS Applications Diode Low Noise Amplifier Evaluation Board for
- Infineon Small Footprint Ultra Low Current Low Noise Amplifier for Global Navigation Sattelite System Diode Low Noise
- BGA7H1N6E6327XTSA1 Infineon, RF Amplifier Low Noise Amplifier, 12.5 dB 2690 MHz, 6-Pin TSNP-6-2
- BGA7L1BN6E6327XTSA1 Infineon, RF Amplifier Low Noise Amplifier, 13.6 dB 960 MHz, 6-Pin TSNP-6-2
- BGB707L7ESDE6327XTSA1 Infineon, RF Amplifier Low Noise, 31.5 dB 5.6 GHz TSLP-7-1
- BGA715N7E6327XTSA2 Infineon, RF Amplifier Low Noise, 20 dB 1.615 GHz, 7-Pin TSNP
- BGA524N6E6327XTSA1 Infineon, RF Amplifier Low Noise, 19.6 dB 1615 MHz, 6-Pin TSNP-6
- OPA857IRGTT Texas Instruments, Ultra Low Noise, Op Amp, 16-Pin VQFN
