Infineon BFR340FH6327XTSA1 RF Bipolar Transistor, 20 mA NPN, 15 V, 3-Pin TSFP-3-1
- RS-stocknr.:
- 261-3952
- Artikelnummer Distrelec:
- 304-41-645
- Fabrikantnummer:
- BFR340FH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 50 eenheden)*
€ 7,95
(excl. BTW)
€ 9,60
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 23 april 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 50 | € 0,159 | € 7,95 |
| 100 - 100 | € 0,143 | € 7,15 |
| 150 - 200 | € 0,129 | € 6,45 |
| 250 - 450 | € 0,116 | € 5,80 |
| 500 + | € 0,104 | € 5,20 |
*prijsindicatie
- RS-stocknr.:
- 261-3952
- Artikelnummer Distrelec:
- 304-41-645
- Fabrikantnummer:
- BFR340FH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 20mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSFP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Maximum Power Dissipation Pd | 75mW | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum DC Current Gain hFE | 90 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 14GHz | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 110°C | |
| Height | 0.55mm | |
| Width | 1.2mm | |
| Series | BFR | |
| Length | 1.2mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 20mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSFP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Maximum Power Dissipation Pd 75mW | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum DC Current Gain hFE 90 | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 14GHz | ||
Pin Count 3 | ||
Maximum Operating Temperature 110°C | ||
Height 0.55mm | ||
Width 1.2mm | ||
Series BFR | ||
Length 1.2mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon low profile silicon NPN RF bipolar transistor, is a low noise device based on Si that is part of Infineon’s established third generation RF bipolar transistor family. Its low current and high breakdown voltage characteristics make the device suitable for oscillators applications for frequencies as high as 3.5 GHz. It remains cost competitive without compromising on ease of use.
Low noise amplifiers for FM and AM radio
Minimum noise figure
Gerelateerde Links
- Infineon RF Bipolar Transistor, 20 mA NPN, 15 V, 3-Pin TSFP-3-1
- Infineon RF Bipolar Transistor, 35 mA NPN, 15 V, 3-Pin TSFP-3-1
- Infineon RF Bipolar Transistor, 80 mA NPN, 15 V, 3-Pin TSFP-3-1
- Infineon RF Bipolar Transistor, 80 mA NPN, 12 V, 3-Pin TSFP
- Infineon BFR380FH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 15 V, 3-Pin TSFP-3-1
- Infineon BFR360FH6765XTSA1 RF Bipolar Transistor, 35 mA NPN, 15 V, 3-Pin TSFP-3-1
- Infineon BFR193FH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 12 V, 3-Pin TSFP
- Infineon NPN RF Bipolar Transistor, 50 mA NPN, 4 V, 4-Pin TSFP