Infineon RF Bipolar Transistor, 60 mA NPN, 4.5 V, 4-Pin TSFP-4-1
- RS-stocknr.:
- 259-1424
- Fabrikantnummer:
- BFP420FH6327XTSA1
- Fabrikant:
- Infineon
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 259-1424
- Fabrikantnummer:
- BFP420FH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 60mA | |
| Maximum Collector Emitter Voltage Vceo | 4.5V | |
| Package Type | TSFP-4-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 25GHz | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 210mW | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Emitter Base Voltage VEBO | 1.5V | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFP420F | |
| Width | 1.25mm | |
| Length | 2mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 60mA | ||
Maximum Collector Emitter Voltage Vceo 4.5V | ||
Package Type TSFP-4-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 25GHz | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 210mW | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Emitter Base Voltage VEBO 1.5V | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series BFP420F | ||
Width 1.25mm | ||
Length 2mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Height 0.9mm | ||
Automotive Standard No | ||
The Infineon low noise high gain silicon bipolar RF transistor is based on Infineon's reliable very high volume 25 GHz silicon bipolar technology.
Popular in discrete oscillators
Thin, small, flat, Pb-free (RoHS compliant) and Hal-free
Green package with visible leads
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