Infineon RF Bipolar Transistor, 60 mA NPN, 4.5 V, 4-Pin TSFP-4-1
- RS-stocknr.:
- 259-1424
- Fabrikantnummer:
- BFP420FH6327XTSA1
- Fabrikant:
- Infineon
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 259-1424
- Fabrikantnummer:
- BFP420FH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 60mA | |
| Maximum Collector Emitter Voltage Vceo | 4.5V | |
| Package Type | TSFP-4-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Maximum Power Dissipation Pd | 210mW | |
| Maximum Transition Frequency ft | 25GHz | |
| Minimum DC Current Gain hFE | 60 | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFP420F | |
| Width | 1.25mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Length | 2mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 60mA | ||
Maximum Collector Emitter Voltage Vceo 4.5V | ||
Package Type TSFP-4-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Maximum Power Dissipation Pd 210mW | ||
Maximum Transition Frequency ft 25GHz | ||
Minimum DC Current Gain hFE 60 | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFP420F | ||
Width 1.25mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Length 2mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
The Infineon low noise high gain silicon bipolar RF transistor is based on Infineon's reliable very high volume 25 GHz silicon bipolar technology.
Popular in discrete oscillators
Thin, small, flat, Pb-free (RoHS compliant) and Hal-free
Green package with visible leads
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