Infineon BFP196WH6327XTSA1 RF Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-343
- RS-stocknr.:
- 259-1417
- Artikelnummer Distrelec:
- 304-40-484
- Fabrikantnummer:
- BFP196WH6327XTSA1
- Fabrikant:
- Infineon
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 259-1417
- Artikelnummer Distrelec:
- 304-40-484
- Fabrikantnummer:
- BFP196WH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 150mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Power Dissipation Pd | 700mW | |
| Minimum Operating Temperature | -60°C | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Transition Frequency ft | 7.5GHz | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFP196W | |
| Width | 2mm | |
| Standards/Approvals | RoHS | |
| Length | 2.1mm | |
| Height | 0.9mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 150mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Power Dissipation Pd 700mW | ||
Minimum Operating Temperature -60°C | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Transition Frequency ft 7.5GHz | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFP196W | ||
Width 2mm | ||
Standards/Approvals RoHS | ||
Length 2.1mm | ||
Height 0.9mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is used for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA.
Power amplifier for DECT and PCN systems
Pb-free (RoHS compliant) package
Gerelateerde Links
- Infineon RF Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor, 150 mA NPN, 12 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor, 150 mA NPN, 13 V, 4-Pin SOT-343
- Infineon BFP650FH6327XTSA1 RF Bipolar Transistor, 150 mA NPN, 13 V, 4-Pin SOT-343
- Infineon BFP196WNH6327XTSA1 RF Bipolar Transistor, 150 mA NPN, 12 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor, 50 mA NPN, 13 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor, 45 mA NPN, 13 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor, 25 mA NPN, 15 V, 4-Pin SOT-343