STMicroelectronics Bipolar Transistor, 16 A NPN, 700 V, 3-Pin TO-263
- RS-stocknr.:
- 188-8497P
- Fabrikantnummer:
- STB13007DT4
- Fabrikant:
- STMicroelectronics
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 188-8497P
- Fabrikantnummer:
- STB13007DT4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 16A | |
| Maximum Collector Emitter Voltage Vceo | 700V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -65°C | |
| Minimum DC Current Gain hFE | 25 | |
| Maximum Emitter Base Voltage VEBO | 9V | |
| Maximum Power Dissipation Pd | 80W | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Width | 4.6mm | |
| Series | STB13007DT4 | |
| Height | 15.85mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 16A | ||
Maximum Collector Emitter Voltage Vceo 700V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -65°C | ||
Minimum DC Current Gain hFE 25 | ||
Maximum Emitter Base Voltage VEBO 9V | ||
Maximum Power Dissipation Pd 80W | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Width 4.6mm | ||
Series STB13007DT4 | ||
Height 15.85mm | ||
Automotive Standard No | ||
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.
Fully characterized at 125 ˚C
Very high switching speed
Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range
Integrated free-wheeling diode
High voltage capability
Minimum lot-to-lot spread for reliable operation
Large RBSOA
Low spread of dynamic parameters
Applications
Electronic transformers for halogen lamps
Switch mode power supplies
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