onsemi Transistor, 10 A NPN, 400 V, 3-Pin TO-220
- RS-stocknr.:
- 186-7374
- Fabrikantnummer:
- BUL45D2G
- Fabrikant:
- onsemi
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 186-7374
- Fabrikantnummer:
- BUL45D2G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 10A | |
| Maximum Collector Emitter Voltage Vceo | 400V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 700V dc | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 12V dc | |
| Minimum DC Current Gain hFE | 7 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Transition Frequency ft | 1MHz | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.83mm | |
| Standards/Approvals | No | |
| Height | 15.75mm | |
| Length | 10.53mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 10A | ||
Maximum Collector Emitter Voltage Vceo 400V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 700V dc | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 12V dc | ||
Minimum DC Current Gain hFE 7 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Transition Frequency ft 1MHz | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Width 4.83mm | ||
Standards/Approvals No | ||
Height 15.75mm | ||
Length 10.53mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.
Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ IC = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
Integrated Collector-Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCE(sat)
"6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
Pb-Free Package is Available
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