onsemi 2N4401TF Transistor, 600 mA NPN, 40 V, 3-Pin TO-92
- RS-stocknr.:
- 166-3204
- Fabrikantnummer:
- 2N4401TF
- Fabrikant:
- onsemi
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 166-3204
- Fabrikantnummer:
- 2N4401TF
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 600mA | |
| Maximum Collector Emitter Voltage Vceo | 40V | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 60V | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 20 | |
| Maximum Emitter Base Voltage VEBO | 6V | |
| Maximum Transition Frequency ft | 250MHz | |
| Maximum Power Dissipation Pd | 625mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Length | 5.2mm | |
| Height | 21.77mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 600mA | ||
Maximum Collector Emitter Voltage Vceo 40V | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 60V | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 20 | ||
Maximum Emitter Base Voltage VEBO 6V | ||
Maximum Transition Frequency ft 250MHz | ||
Maximum Power Dissipation Pd 625mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Length 5.2mm | ||
Height 21.77mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Small Signal NPN Transistors, 40V to 50V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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