Infineon Transistor, 25 mA NPN, 13 V, 4-Pin SOT-343
- RS-stocknr.:
- 165-8077
- Fabrikantnummer:
- BFP720H6327XTSA1
- Fabrikant:
- Infineon
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 165-8077
- Fabrikantnummer:
- BFP720H6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 25mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Transition Frequency ft | 45GHz | |
| Minimum DC Current Gain hFE | 160 | |
| Maximum Power Dissipation Pd | 100mW | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFP720 | |
| Standards/Approvals | No | |
| Width | 2.1mm | |
| Length | 2mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 25mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Transition Frequency ft 45GHz | ||
Minimum DC Current Gain hFE 160 | ||
Maximum Power Dissipation Pd 100mW | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series BFP720 | ||
Standards/Approvals No | ||
Width 2.1mm | ||
Length 2mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
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