onsemi MJD210T4G Transistor, -5 A PNP, -25 V, 4-Pin DPAK
- RS-stocknr.:
- 145-4763
- Fabrikantnummer:
- MJD210T4G
- Fabrikant:
- onsemi
Ontvang bulkkorting
Voeg 10000 meer toe om € 0,00 te besparen
Bekijk bulkkortingSubtotaal (1 rol van 2500 eenheden)*
€ 407,50
(excl. BTW)
€ 492,50
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 13 april 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* | Bespaar |
|---|---|---|---|
| 2500 - 7500 | € 0,163 | € 407,50 | - |
| 10000 + | € 0,163 | € 407,50 | - |
*prijsindicatie
- RS-stocknr.:
- 145-4763
- Fabrikantnummer:
- MJD210T4G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -5A | |
| Maximum Collector Emitter Voltage Vceo | -25V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 40V dc | |
| Maximum Transition Frequency ft | 10MHz | |
| Maximum Power Dissipation Pd | 12.5W | |
| Minimum Operating Temperature | -65°C | |
| Minimum DC Current Gain hFE | 10 | |
| Transistor Polarity | PNP | |
| Maximum Emitter Base Voltage VEBO | 8V | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| Series | MJD210 | |
| Width | 10.41mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -5A | ||
Maximum Collector Emitter Voltage Vceo -25V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 40V dc | ||
Maximum Transition Frequency ft 10MHz | ||
Maximum Power Dissipation Pd 12.5W | ||
Minimum Operating Temperature -65°C | ||
Minimum DC Current Gain hFE 10 | ||
Transistor Polarity PNP | ||
Maximum Emitter Base Voltage VEBO 8V | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.38mm | ||
Series MJD210 | ||
Width 10.41mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- MY
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
Gerelateerde Links
- onsemi MJD210T4G Transistor, -5 A PNP, -25 V, 4-Pin DPAK
- onsemi MJD210RLG Transistor, -5 A PNP, -25 V, 4-Pin DPAK
- onsemi MJD210G Transistor, -5 A PNP, -25 V, 4-Pin DPAK
- onsemi MJD253T4G Transistor, -4 A PNP, -100 V, 3-Pin DPAK
- onsemi MJD200G Transistor, 5 A, 25 V, 3-Pin DPAK
- onsemi Transistor, -500 mA PNP, -300 V, 3-Pin DPAK
- onsemi MJD42CG Bipolar Transistor, -10 A PNP, -100 V, 3-Pin DPAK
- onsemi MJD32CG Transistor, 3 A PNP, 100 V, 3-Pin DPAK