STMicroelectronics SGT240R70ITK Power Transistor, 700 V N-Channel 10 A Surface Mount TO-252 (D-PAK-3), 3-Pin
- RS-stocknr.:
- 898-598
- Fabrikantnummer:
- SGT240R70ITK
- Fabrikant:
- STMicroelectronics
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- Verzending vanaf 01 maart 2027
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 2,45 |
| 10 - 99 | € 1,21 |
| 100 - 499 | € 1,09 |
| 500 - 999 | € 0,88 |
| 1000 + | € 0,83 |
*prijsindicatie
- RS-stocknr.:
- 898-598
- Fabrikantnummer:
- SGT240R70ITK
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Power Transistor | |
| Package Type | TO-252 (D-PAK-3) | |
| Maximum Collector Emitter Voltage Vceo | 700V | |
| Mount Type | Surface Mount | |
| Transistor Configuration | N-Channel | |
| Maximum Emitter Base Voltage VEBO | 7V | |
| Transistor Polarity | N-Channel | |
| Maximum Power Dissipation Pd | 77W | |
| Maximum Continuous Collector Current Ic | 10A | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Series | SGT240R70ITK | |
| Width | 2.38mm | |
| Standards/Approvals | ECOPACK2 | |
| Height | 10.5mm | |
| Length | 6.22mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Power Transistor | ||
Package Type TO-252 (D-PAK-3) | ||
Maximum Collector Emitter Voltage Vceo 700V | ||
Mount Type Surface Mount | ||
Transistor Configuration N-Channel | ||
Maximum Emitter Base Voltage VEBO 7V | ||
Transistor Polarity N-Channel | ||
Maximum Power Dissipation Pd 77W | ||
Maximum Continuous Collector Current Ic 10A | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Series SGT240R70ITK | ||
Width 2.38mm | ||
Standards/Approvals ECOPACK2 | ||
Height 10.5mm | ||
Length 6.22mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics PowerGaN transistor device provides extremely low conduction losses, high current capability and ultrafast switching operation to enable high power density and unbeatable efficiency performances.
Enhancement mode normally off transistor
High power management capability
Zero reverse recovery charge
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