Nexperia PBSS5160U,115 Transistor, -1 A PNP, -60 V, 3-Pin UMT
- RS-stocknr.:
- 485-353
- Fabrikantnummer:
- PBSS5160U,115
- Fabrikant:
- Nexperia
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 4,88
(excl. BTW)
€ 5,90
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 40 stuk(s) vanaf 04 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 40 | € 0,244 | € 4,88 |
| 60 - 100 | € 0,149 | € 2,98 |
| 120 - 220 | € 0,066 | € 1,32 |
| 240 - 460 | € 0,064 | € 1,28 |
| 480 + | € 0,063 | € 1,26 |
*prijsindicatie
- RS-stocknr.:
- 485-353
- Fabrikantnummer:
- PBSS5160U,115
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -1A | |
| Maximum Collector Emitter Voltage Vceo | -60V | |
| Package Type | UMT | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 80V | |
| Maximum Transition Frequency ft | 185MHz | |
| Maximum Power Dissipation Pd | 415mW | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 100 | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum Operating Temperature | -65°C | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Series | PBSS5160U | |
| Standards/Approvals | No | |
| Height | 0.95mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -1A | ||
Maximum Collector Emitter Voltage Vceo -60V | ||
Package Type UMT | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 80V | ||
Maximum Transition Frequency ft 185MHz | ||
Maximum Power Dissipation Pd 415mW | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 100 | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum Operating Temperature -65°C | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Series PBSS5160U | ||
Standards/Approvals No | ||
Height 0.95mm | ||
Automotive Standard AEC-Q101 | ||
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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