IRF520NPBF N-Channel MOSFET, 9.7 A, 100 V HEXFET, 3-Pin TO-220AB Infineon

  • RS-stocknr. 919-4876
  • Fabrikantnummer IRF520NPBF
  • Fabrikant Infineon
Datasheets
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N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specificaties
Kenmerk Waarde
Channel Type N
Maximum Continuous Drain Current 9.7 A
Maximum Drain Source Voltage 100 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 200 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 48 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Maximum Operating Temperature +175 °C
Typical Gate Charge @ Vgs 25 nC @ 10 V
Minimum Operating Temperature -55 °C
Length 10.54mm
Width 4.69mm
Series HEXFET
Height 8.77mm
Transistor Material Si
850 op voorraad - levertijd is 1 werkdag(en).
Prijs Each (In a Tube of 50)
0,69
(excl. BTW)
0,83
(incl. BTW)
Aantal stuks
Per stuk
Per tube*
50 - 200
0,69 €
34,50 €
250 - 950
0,528 €
26,40 €
1000 - 2450
0,366 €
18,30 €
2500 +
0,348 €
17,40 €
*prijsindicatie