CCS020M12CM2 Hex SiC N-Channel MOSFET, 29 A, 1200 V, 28-Pin Wolfspeed

  • RS-stocknr. 916-3888
  • Fabrikantnummer CCS020M12CM2
  • Fabrikant Wolfspeed
Datasheets
Wetgeving en conformiteit
Conform
Productomschrijving

Wolfspeed Silicon Carbide Power MOSFET Modules

Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements

MOSFET Transistors, Wolfspeed

Specificaties
Kenmerk Waarde
Channel Type N
Maximum Continuous Drain Current 29 A
Maximum Drain Source Voltage 1200 V
Package Type Six Pack
Mounting Type Panel Mount
Pin Count 28
Maximum Drain Source Resistance 208 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.2V
Minimum Gate Threshold Voltage 1.7V
Maximum Power Dissipation 167 W
Transistor Configuration 3 Phase
Maximum Gate Source Voltage -10 V, +25 V
Number of Elements per Chip 6
Minimum Operating Temperature -40 °C
Typical Gate Charge @ Vgs 61.5 nC @ 20 V, 61.5 nC @ 5 V
Transistor Material SiC
Width 47mm
Height 17mm
Maximum Operating Temperature +150 °C
Forward Diode Voltage 2.3V
Length 108mm
12 op voorraad - levertijd is 1 werkdag(en).
Prijs Each
220,56
(excl. BTW)
266,88
(incl. BTW)
Aantal stuks
Per stuk
1 - 4
220,56 €
5 - 9
211,06 €
10 - 24
205,64 €
25 +
200,51 €
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