N-Channel MOSFET Transistor, 100 A, 150 V, 3-Pin D2PAK Infineon IPB072N15N3GATMA1

RS-stocknr.:: 911-4864
Fabrikantnummer:: IPB072N15N3GATMA1
Fabrikant:: Infineon

N-Channel MOSFET Transistor, 100 A, 150 V, 3-Pin D2PAK Infineon IPB072N15N3GATMA1

4000 op voorraad - levertijd is 1 werkdag(en).

Prijs Per stuk (op een rol 1000)

€ 2,958

(excl. BTW)

€ 3,579

(incl. BTW)

Aantal stuks	Per stuk	Per reel*
1000 +	€ 2,958	€ 2.958,00

*prijsindicatie

RS-stocknr.:: 911-4864
Fabrikantnummer:: IPB072N15N3GATMA1
Fabrikant:: Infineon

Datasheet
ESD Control Selection Guide V1

RS-stocknr.:: 911-4864
Fabrikantnummer:: IPB072N15N3GATMA1
Fabrikant:: Infineon

Datasheet
ESD Control Selection Guide V1

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	150 V
Package Type	D2PAK (TO-263)
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	7.7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	70 nC @ 10 V
Width	9.45mm
Length	10.31mm
Height	4.57mm
Minimum Operating Temperature	-55 °C

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	150 V
Package Type	D2PAK (TO-263)
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	7.7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	70 nC @ 10 V
Width	9.45mm
Length	10.31mm
Height	4.57mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET Transistor, 100 A, 150 V, 3-Pin D2PAK Infineon IPB072N15N3GATMA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over

Infineon OptiMOS™3 Power MOSFETs, 100V and over