N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220SIS Toshiba TK20A60W,S5VX(M

RS-stocknr.:: 827-6151P
Fabrikantnummer:: TK20A60W,S5VX(M
Fabrikant:: Toshiba

N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220SIS Toshiba TK20A60W,S5VX(M

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RS-stocknr.:: 827-6151P
Fabrikantnummer:: TK20A60W,S5VX(M
Fabrikant:: Toshiba

TK20A60W, MOSFET Silicon N-Channel MOS (DTMOS IV)
ESD Control Selection Guide V1

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	20 A
Maximum Drain Source Voltage	600 V
Series	TK
Package Type	TO-220SIS
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	155 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	45 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	10mm
Width	4.5mm
Transistor Material	Si
Typical Gate Charge @ Vgs	48 nC @ 10 V
Height	15mm

N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220SIS Toshiba TK20A60W,S5VX(M

MOSFET N-Channel, TK2x Series, Toshiba