N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 Toshiba TK12E60W,S1VX(S

RS-stocknr.:: 827-6113P
Fabrikantnummer:: TK12E60W,S1VX(S
Fabrikant:: Toshiba

N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 Toshiba TK12E60W,S1VX(S

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RS-stocknr.:: 827-6113P
Fabrikantnummer:: TK12E60W,S1VX(S
Fabrikant:: Toshiba

TK12E60W, MOSFET Silicon N-Channel MOS (DTMOS IV)
ESD Control Selection Guide V1

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	11.5 A
Maximum Drain Source Voltage	600 V
Series	TK
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	300 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	110 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	4.45mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	25 nC @ 10 V
Length	10.16mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Height	15.1mm