N-Channel MOSFET, 44 A, 800 V, 3-Pin TO-264 IXYS IXFK44N80Q3

RS-stocknr.:: 801-1411
Fabrikantnummer:: IXFK44N80Q3
Fabrikant:: IXYS

N-Channel MOSFET, 44 A, 800 V, 3-Pin TO-264 IXYS IXFK44N80Q3

Bekijk alle MOSFETs

Niet meer leverbaar – bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service

RS-stocknr.:: 801-1411
Fabrikantnummer:: IXFK44N80Q3
Fabrikant:: IXYS

Datasheets

Wetgeving en conformiteit

Productomschrijving

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specificaties

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	44 A
Maximum Drain Source Voltage	800 V
Package Type	TO-264
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	190 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	1.25 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	5.13mm
Typical Gate Charge @ Vgs	185 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Length	19.96mm
Transistor Material	Si
Height	26.16mm
Series	HiperFET, Q3-Class
Minimum Operating Temperature	-55 °C

RS-stocknr.:: 801-1411
Fabrikantnummer:: IXFK44N80Q3
Fabrikant:: IXYS