N-Channel MOSFET, 350 mA, 60 V, 3-Pin SOT-23 Nexperia 2N7002BK,215

RS-stocknr.:: 781-6691P
Fabrikantnummer:: 2N7002BK,215
Fabrikant:: Nexperia

N-Channel MOSFET, 350 mA, 60 V, 3-Pin SOT-23 Nexperia 2N7002BK,215

88000 op voorraad - levertijd is 1 werkdag(en).

Prijs Per stuk (geleverd op een wiel) Hoeveelheden onder 150 op doorlopende strook

€ 0,024

(excl. BTW)

€ 0,029

(incl. BTW)

Aantal stuks	Per stuk
200 +	€ 0,024

RS-stocknr.:: 781-6691P
Fabrikantnummer:: 2N7002BK,215
Fabrikant:: Nexperia

2N7002BK 60V 350mA N-channel Trench MOSFET
ESD Control Selection Guide V1

RS-stocknr.:: 781-6691P
Fabrikantnummer:: 2N7002BK,215
Fabrikant:: Nexperia

2N7002BK 60V 350mA N-channel Trench MOSFET
ESD Control Selection Guide V1

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	350 mA
Maximum Drain Source Voltage	60 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.1V
Minimum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	440 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Typical Gate Charge @ Vgs	0.5 nC @ 4.5 V
Length	3mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	1.4mm
Height	1mm
Minimum Operating Temperature	-55 °C

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	350 mA
Maximum Drain Source Voltage	60 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.1V
Minimum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	440 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Typical Gate Charge @ Vgs	0.5 nC @ 4.5 V
Length	3mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	1.4mm
Height	1mm
Minimum Operating Temperature	-55 °C

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