N-Channel MOSFET, 21 mA, 600 V, 3-Pin SOT-23 Infineon BSS127H6327XTSA2
- RS-stocknr.:
- 753-2832
- Fabrikantnummer:
- BSS127H6327XTSA2
- Fabrikant:
- Infineon
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 15/05/2025, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Per stuk (in een verpakking 25)
€ 0,263
(excl. BTW)
€ 0,318
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 25 - 225 | € 0,263 | € 6,575 |
| 250 - 600 | € 0,182 | € 4,55 |
| 625 - 1225 | € 0,168 | € 4,20 |
| 1250 - 2475 | € 0,158 | € 3,95 |
| 2500 + | € 0,118 | € 2,95 |
| *prijsindicatie | ||
- RS-stocknr.:
- 753-2832
- Fabrikantnummer:
- BSS127H6327XTSA2
- Fabrikant:
- Infineon
Wetgeving en conformiteit
Productomschrijving
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 21 mA |
| Maximum Drain Source Voltage | 600 V |
| Package Type | SOT-23 |
| Series | SIPMOS |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 600 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.6V |
| Minimum Gate Threshold Voltage | 1.4V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 0.65 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Length | 2.9mm |
| Width | 1.3mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 1mm |
- RS-stocknr.:
- 753-2832
- Fabrikantnummer:
- BSS127H6327XTSA2
- Fabrikant:
- Infineon