P-Channel MOSFET, 20 A, 55 V, 3-Pin IPAK Infineon IRLU9343PBF
- RS-stocknr.:
- 650-4643
- Fabrikantnummer:
- IRLU9343PBF
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 650-4643
- Fabrikantnummer:
- IRLU9343PBF
- Fabrikant:
- Infineon
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
The Infineon IRLU9343 is the 55V single P-channel HEXFET power MOSFET in a I-Pak package. This digital audio HEXFET is specifically designed for class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Repetitive avalanche capability for robustness and reliability
Multiple package options
175°C operating junction temperature for ruggedness
Multiple package options
175°C operating junction temperature for ruggedness
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Kenmerk | Waarde |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 55 V |
| Package Type | IPAK (TO-251) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 105 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 79 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 2.39mm |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V |
| Length | 6.73mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -40 °C |
| Series | HEXFET |
| Height | 6.22mm |
- RS-stocknr.:
- 650-4643
- Fabrikantnummer:
- IRLU9343PBF
- Fabrikant:
- Infineon
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
The Infineon IRLU9343 is the 55V single P-channel HEXFET power MOSFET in a I-Pak package. This digital audio HEXFET is specifically designed for class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Repetitive avalanche capability for robustness and reliability
Multiple package options
175°C operating junction temperature for ruggedness
Multiple package options
175°C operating junction temperature for ruggedness
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Kenmerk | Waarde |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 55 V |
| Package Type | IPAK (TO-251) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 105 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 79 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 2.39mm |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V |
| Length | 6.73mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -40 °C |
| Series | HEXFET |
| Height | 6.22mm |