- RS-stocknr.:
- 542-9377
- Fabrikantnummer:
- IRF7309PBF
- Fabrikant:
- Infineon
Niet meer leverbaar – bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service
Alternatief
Dit product is momenteel niet beschikbaar. Hierbij onze aanbeveling voor een alternatief product.
- RS-stocknr.:
- 542-9377
- Fabrikantnummer:
- IRF7309PBF
- Fabrikant:
- Infineon
Datasheets
Wetgeving en conformiteit
Productomschrijving
Dual N/P-Channel Power MOSFET, Infineon
Infineons dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N, P |
Maximum Continuous Drain Current | 3 A, 4 A |
Maximum Drain Source Voltage | 30 V |
Package Type | SOIC |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 50 mΩ, 100 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 1.4 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -20 V, +20 V |
Width | 4mm |
Length | 5mm |
Number of Elements per Chip | 2 |
Typical Gate Charge @ Vgs | 25 nC @ 4.5 V |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Series | HEXFET |
Minimum Operating Temperature | -55 °C |
Height | 1.5mm |
- RS-stocknr.:
- 542-9377
- Fabrikantnummer:
- IRF7309PBF
- Fabrikant:
- Infineon