Onlangs gezocht

    Dual N/P-Channel MOSFET, 3 A, 4 A, 30 V, 8-Pin SOIC Infineon IRF7309PBF

    RS-stocknr.:
    542-9377
    Fabrikantnummer:
    IRF7309PBF
    Fabrikant:
    Infineon
    Infineon
    Bekijk alle MOSFETs
    Niet meer leverbaar bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service

    Alternatief

    Dit product is momenteel niet beschikbaar. Hierbij onze aanbeveling voor een alternatief product.

    Dual N/P-Channel MOSFET Transistor, 3.1 A, 4.5 A, 60 V, 8-Pin SOIC Vishay Si4559EY
    RS-stocknr.
    307-5350

    Prijs Each

    1,42 €

    (excl. BTW)

    1,72 €

    (incl. BTW)

    RS-stocknr.:
    542-9377
    Fabrikantnummer:
    IRF7309PBF
    Fabrikant:
    Infineon

    Wetgeving en conformiteit


    Productomschrijving

    Dual N/P-Channel Power MOSFET, Infineon


    Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.



    MOSFET Transistors, Infineon


    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


    Specificaties

    KenmerkWaarde
    Channel TypeN, P
    Maximum Continuous Drain Current3 A, 4 A
    Maximum Drain Source Voltage30 V
    Package TypeSOIC
    Mounting TypeSurface Mount
    Pin Count8
    Maximum Drain Source Resistance50 mΩ, 100 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage1V
    Minimum Gate Threshold Voltage1V
    Maximum Power Dissipation1.4 W
    Transistor ConfigurationIsolated
    Maximum Gate Source Voltage-20 V, +20 V
    Transistor MaterialSi
    Maximum Operating Temperature+150 °C
    Length5mm
    Width4mm
    Number of Elements per Chip2
    Typical Gate Charge @ Vgs25 nC @ 4.5 V
    Height1.5mm
    Minimum Operating Temperature-55 °C
    SeriesHEXFET
    Niet meer leverbaar bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service

    Alternatief

    Dit product is momenteel niet beschikbaar. Hierbij onze aanbeveling voor een alternatief product.

    Dual N/P-Channel MOSFET Transistor, 3.1 A, 4.5 A, 60 V, 8-Pin SOIC Vishay Si4559EY
    RS-stocknr.
    307-5350

    Prijs Each

    1,42 €

    (excl. BTW)

    1,72 €

    (incl. BTW)