P-Channel MOSFET, 200 V TO-92 Microchip TP0620N3-G
- RS-stocknr.:
- 264-8927
- Fabrikantnummer:
- TP0620N3-G
- Fabrikant:
- Microchip
915 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Per stuk (in een verpakking 5)
€ 1,764
(excl. BTW)
€ 2,134
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 5 - 45 | € 1,764 | € 8,82 |
| 50 - 95 | € 1,454 | € 7,27 |
| 100 - 245 | € 1,35 | € 6,75 |
| 250 - 495 | € 1,322 | € 6,61 |
| 500 + | € 1,294 | € 6,47 |
| *prijsindicatie | ||
- RS-stocknr.:
- 264-8927
- Fabrikantnummer:
- TP0620N3-G
- Fabrikant:
- Microchip
Datasheets
Wetgeving en conformiteit
Productomschrijving
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (85pF typical)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
High input impedance
Low input capacitance (85pF typical)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | P |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TO-92 |
| Mounting Type | Through Hole |