- RS-stocknr.:
- 201-2810
- Fabrikantnummer:
- FF6MR12W2M1B11BOMA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 201-2810
- Fabrikantnummer:
- FF6MR12W2M1B11BOMA1
- Fabrikant:
- Infineon
Datasheets
Wetgeving en conformiteit
Productomschrijving
The Infineon 6 mO, 1200 V half bridge module with Silicon Carbide MOSFET, It has NTC temperature sensor and PressFIT contact technology. It is also available with thermal interface material.
High current density
Low inductive design
Low switching losses
RoHS-compliant modules
Low inductive design
Low switching losses
RoHS-compliant modules
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 200 A |
Maximum Drain Source Voltage | 1200 V |
Package Type | AG-EASY2B |
Mounting Type | Screw Mount |
Maximum Drain Source Resistance | 0.00825 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5.55V |
Number of Elements per Chip | 2 |
Transistor Material | SiC |
Series | CoolSiC |