- RS-stocknr.:
- 188-5114
- Fabrikantnummer:
- SIS108DN-T1-GE3
- Fabrikant:
- Vishay
Niet meer leverbaar – bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service
- RS-stocknr.:
- 188-5114
- Fabrikantnummer:
- SIS108DN-T1-GE3
- Fabrikant:
- Vishay
Datasheets
Wetgeving en conformiteit
Productomschrijving
N-Channel 80 V (D-S) MOSFET
TrenchFET® Gen IV power MOSFET
Tuned for the lowest RDS x Qoss FOM
Tuned for the lowest RDS x Qoss FOM
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 16 A |
Maximum Drain Source Voltage | 80 V |
Package Type | PowerPAK 1212 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 44 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 24 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Typical Gate Charge @ Vgs | 9.2 nC @ 10 V |
Maximum Operating Temperature | +150 °C |
Length | 3.15mm |
Width | 3.15mm |
Number of Elements per Chip | 1 |
Forward Diode Voltage | 1.2V |
Minimum Operating Temperature | -55 °C |
Height | 1.07mm |