N-Channel MOSFET, 12 A, 100 V, 6-Pin SC-70 Vishay Siliconix SiA110DJ-T1-GE3

Niet meer leverbaar – bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service

Datasheets

N.v.t.

TrenchFET® Gen IV power MOSFET
Tuned for the lowest RDS - Qoss

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	12 A
Maximum Drain Source Voltage	100 V
Package Type	SC-70
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	19 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	8.5 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Width	1.35mm
Length	2.2mm
Height	1mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V