SiC MOSFET, 2 + Tab-Pin TO-220-2L onsemi FFSP1265A
- RS-stocknr.:
- 172-3396
- Fabrikantnummer:
- FFSP1265A
- Fabrikant:
- ON Semiconductor
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- RS-stocknr.:
- 172-3396
- Fabrikantnummer:
- FFSP1265A
- Fabrikant:
- ON Semiconductor
Datasheets
Wetgeving en conformiteit
Productomschrijving
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding
Specificaties
Kenmerk | Waarde |
|---|---|
| Package Type | TO-220-2L |
| Mounting Type | Through Hole |
| Pin Count | 2 + Tab |
| Maximum Power Dissipation | 115 W |
| Transistor Configuration | Single |
| Width | 4.8mm |
| Number of Elements per Chip | 1 |
| Transistor Material | SiC |
| Maximum Operating Temperature | +175 °C |
| Length | 10.67mm |
| Forward Diode Voltage | 2.4V |
| Height | 16.51mm |
| Minimum Operating Temperature | -55 °C |
- RS-stocknr.:
- 172-3396
- Fabrikantnummer:
- FFSP1265A
- Fabrikant:
- ON Semiconductor