N-Channel MOSFET, 4 A, 600 V, 3-Pin ITO-220 Taiwan Semi TSM4NB60CI C0G

RS-stocknr.:: 171-3626
Fabrikantnummer:: TSM4NB60CI C0G
Fabrikant:: Taiwan Semiconductor

N-Channel MOSFET, 4 A, 600 V, 3-Pin ITO-220 Taiwan Semi TSM4NB60CI C0G

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RS-stocknr.:: 171-3626
Fabrikantnummer:: TSM4NB60CI C0G
Fabrikant:: Taiwan Semiconductor

Datasheets

Wetgeving en conformiteit

Productomschrijving

The Taiwan Semiconductor 600V, 4A, 2. 5Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in power Supply and lighting applications.

100% Avalanche tested
Pb-free plating
Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
Operating temperature ranges between -55 °C to +150 °C
25W max. power dissipation
Gate threshold voltage ranges between 2.5V-4.5V

Specificaties

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	4 A
Maximum Drain Source Voltage	600 V
Package Type	ITO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	2.5 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	25 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±30 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	6.1mm
Typical Gate Charge @ Vgs	14.5 nC @ 10 V
Length	6.5mm
Forward Diode Voltage	1.13V
Minimum Operating Temperature	-55 °C
Height	2.28mm

RS-stocknr.:: 171-3626
Fabrikantnummer:: TSM4NB60CI C0G
Fabrikant:: Taiwan Semiconductor