- RS-stocknr.:
- 165-6823
- Fabrikantnummer:
- BSS308PEH6327XTSA1
- Fabrikant:
- Infineon
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 05/05/2025, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Per stuk (op een rol 3000)
€ 0,11
(excl. BTW)
€ 0,13
(incl. BTW)
Aantal stuks | Per stuk | Per reel* |
3000 - 3000 | € 0,11 | € 330,00 |
6000 - 6000 | € 0,105 | € 315,00 |
9000 + | € 0,098 | € 294,00 |
*prijsindicatie |
- RS-stocknr.:
- 165-6823
- Fabrikantnummer:
- BSS308PEH6327XTSA1
- Fabrikant:
- Infineon
Wetgeving en conformiteit
- Land van herkomst:
- MY
Productomschrijving
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 1.6 A |
Maximum Drain Source Voltage | 30 V |
Package Type | SOT-23 |
Series | OptiMOS P |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 130 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 500 mW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Width | 1.3mm |
Typical Gate Charge @ Vgs | 5 nC @ 10 V |
Length | 2.9mm |
Transistor Material | Si |
Height | 1mm |
Minimum Operating Temperature | -55 °C |
- RS-stocknr.:
- 165-6823
- Fabrikantnummer:
- BSS308PEH6327XTSA1
- Fabrikant:
- Infineon