Dual SiC N-Channel MOSFET, 404 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS300M12BM2
- RS-stocknr.:
- 162-9721
- Fabrikantnummer:
- CAS300M12BM2
- Fabrikant:
- Wolfspeed
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 18/07/2024, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Per stuk (in een doos van 10)
€ 843,744
(excl. BTW)
€ 1.020,93
(incl. BTW)
| Aantal stuks | Per stuk | Per Doos* |
| 10 + | € 843,744 | € 8.437,44 |
| *prijsindicatie | ||
- RS-stocknr.:
- 162-9721
- Fabrikantnummer:
- CAS300M12BM2
- Fabrikant:
- Wolfspeed
Wetgeving en conformiteit
- Land van herkomst:
- CN
Productomschrijving
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
MOSFET Transistors, Wolfspeed
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 404 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | Half Bridge |
| Mounting Type | Screw Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 9.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.3V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 1.66 kW |
| Transistor Configuration | Series |
| Maximum Gate Source Voltage | -10 V, +25 V |
| Transistor Material | SiC |
| Length | 106.4mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 1025 nC @ 20 V, 1025 nC @ 5 V |
| Number of Elements per Chip | 2 |
| Width | 61.4mm |
| Height | 30mm |
| Forward Diode Voltage | 2.5V |