SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D

RS-stocknr.:: 162-9714
Fabrikantnummer:: C3M0280090D
Fabrikant:: Wolfspeed

SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D

660 op voorraad - levertijd is 1 werkdag(en).

Toegevoegd

Prijs Per stuk (in een tube 30)

€ 4,271

(excl. BTW)

€ 5,168

(incl. BTW)

Aantal stuks	Per stuk	Per tube*
30 - 120	€ 4,271	€ 128,13
150 - 270	€ 4,16	€ 124,80
300 +	€ 4,057	€ 121,71
*prijsindicatie

RS-stocknr.:: 162-9714
Fabrikantnummer:: C3M0280090D
Fabrikant:: Wolfspeed

Datasheets

Wetgeving en conformiteit

Land van herkomst:: CN

Productomschrijving

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Specificaties

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	11.5 A
Maximum Drain Source Voltage	900 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	360 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	1.8V
Maximum Power Dissipation	54 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +18 V
Width	21.1mm
Typical Gate Charge @ Vgs	9.5 nC @ 15 V
Number of Elements per Chip	1
Length	16.13mm
Transistor Material	SiC
Maximum Operating Temperature	+150 °C
Forward Diode Voltage	4.8V
Minimum Operating Temperature	-55 °C
Height	5.21mm

RS-stocknr.:: 162-9714
Fabrikantnummer:: C3M0280090D
Fabrikant:: Wolfspeed