3 P-Channel MOSFET, -4.9 A, -12 V, 2-Pin WLCSP Nexperia PMCM4401VPEZ

RS-stocknr.:: 153-0772
Fabrikantnummer:: PMCM4401VPEZ
Fabrikant:: Nexperia

3 P-Channel MOSFET, -4.9 A, -12 V, 2-Pin WLCSP Nexperia PMCM4401VPEZ

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RS-stocknr.:: 153-0772
Fabrikantnummer:: PMCM4401VPEZ
Fabrikant:: Nexperia

Datasheets

Wetgeving en conformiteit

Productomschrijving

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

12 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Low threshold voltage
Ultra small package: 0.78 x 0.78 x 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Battery switch
High-speed line driver
Low-side loadswitch
Switching circuits

Specificaties

Kenmerk	Waarde
Channel Type	P
Maximum Continuous Drain Current	-4.9 A
Maximum Drain Source Voltage	-12 V
Package Type	WLCSP
Mounting Type	Surface Mount
Pin Count	2
Maximum Drain Source Resistance	160 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	-0.9V
Minimum Gate Threshold Voltage	-0.4V
Maximum Power Dissipation	12500 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	8 V
Number of Elements per Chip	3
Length	0.75mm
Maximum Operating Temperature	+150 °C
Width	0.75mm
Typical Gate Charge @ Vgs	6.8 nC @ 10 V
Height	0.315mm
Minimum Operating Temperature	-55 °C

RS-stocknr.:: 153-0772
Fabrikantnummer:: PMCM4401VPEZ
Fabrikant:: Nexperia