N-Channel MOSFET, 55 A, 30 V, 3-Pin DPAK Infineon IRLR3103TRPBF

RS-stocknr.:: 145-9502
Fabrikantnummer:: IRLR3103TRPBF
Fabrikant:: Infineon

N-Channel MOSFET, 55 A, 30 V, 3-Pin DPAK Infineon IRLR3103TRPBF

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RS-stocknr.:: 145-9502
Fabrikantnummer:: IRLR3103TRPBF
Fabrikant:: Infineon

Datasheets

Wetgeving en conformiteit

Land van herkomst:: CN

Productomschrijving

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specificaties

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	55 A
Maximum Drain Source Voltage	30 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	24 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	107 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Typical Gate Charge @ Vgs	50 nC @ 4.5 V
Number of Elements per Chip	1
Length	6.73mm
Width	6.22mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Series	HEXFET
Minimum Operating Temperature	-55 °C
Height	2.39mm

RS-stocknr.:: 145-9502
Fabrikantnummer:: IRLR3103TRPBF
Fabrikant:: Infineon