N-Channel MOSFET, 10.3 A, 600 V, 3-Pin TO-220 FP Infineon IPAW60R600CEXKSA1

RS-stocknr.:: 133-9787
Fabrikantnummer:: IPAW60R600CEXKSA1
Fabrikant:: Infineon

N-Channel MOSFET, 10.3 A, 600 V, 3-Pin TO-220 FP Infineon IPAW60R600CEXKSA1

Dit product is momenteel niet beschikbaar voor nabestelling.

We hebben dit product helaas niet op voorraad en het is op dit moment niet beschikbaar voor nabestelling.

Prijs Per stuk (in een tube 450)

€ 0,65

(excl. BTW)

€ 0,79

(incl. BTW)

Aantal stuks	Per stuk	Per tube*
450 - 450	€ 0,65	€ 292,50
900 - 900	€ 0,617	€ 277,65
1350 +	€ 0,578	€ 260,10
*prijsindicatie

RS-stocknr.:: 133-9787
Fabrikantnummer:: IPAW60R600CEXKSA1
Fabrikant:: Infineon

Datasheets

Wetgeving en conformiteit

Land van herkomst:: CN

Productomschrijving

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specificaties

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	10.3 A
Maximum Drain Source Voltage	600 V
Series	CoolMOS CE
Package Type	TO-220 FP
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	1.4 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	28 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Width	4.9mm
Typical Gate Charge @ Vgs	20.5 nC @ 10 V
Length	11.3mm
Maximum Operating Temperature	+150 °C
Height	16.27mm
Minimum Operating Temperature	-40 °C
Forward Diode Voltage	0.9V

RS-stocknr.:: 133-9787
Fabrikantnummer:: IPAW60R600CEXKSA1
Fabrikant:: Infineon