N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-223 Infineon BSP372NH6327XTSA1

RS-stocknr.:: 110-7754
Fabrikantnummer:: BSP372NH6327XTSA1
Fabrikant:: Infineon

N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-223 Infineon BSP372NH6327XTSA1

tijdelijk niet op voorraad – nieuwe voorraad verwacht op 07/04/2025, met een levertijd van 2 à 3 werkdagen.

Toegevoegd

Prijs Per stuk (in een verpakking 50)

€ 0,643

(excl. BTW)

€ 0,778

(incl. BTW)

Aantal stuks	Per stuk	Per pak*
50 - 50	€ 0,643	€ 32,15
100 - 200	€ 0,521	€ 26,05
250 - 450	€ 0,488	€ 24,40
500 - 1200	€ 0,456	€ 22,80
1250 +	€ 0,418	€ 20,90
*prijsindicatie

RS-stocknr.:: 110-7754
Fabrikantnummer:: BSP372NH6327XTSA1
Fabrikant:: Infineon

Datasheets

Wetgeving en conformiteit

Productomschrijving

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specificaties

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	1.8 A
Maximum Drain Source Voltage	100 V
Package Type	SOT-223
Series	OptiMOS
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	270 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.8V
Minimum Gate Threshold Voltage	0.8V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	3.5mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	9.5 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Length	6.5mm
Forward Diode Voltage	1.1V
Height	1.6mm
Minimum Operating Temperature	-55 °C

RS-stocknr.:: 110-7754
Fabrikantnummer:: BSP372NH6327XTSA1
Fabrikant:: Infineon