- RS-stocknr.:
- 110-7726
- Fabrikantnummer:
- BSL215CH6327XTSA1
- Fabrikant:
- Infineon
64560 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Per stuk (op een tape 60)
€ 0,151
(excl. BTW)
€ 0,183
(incl. BTW)
Aantal stuks | Per stuk | Per tape* |
60 + | € 0,151 | € 9,06 |
*prijsindicatie |
- RS-stocknr.:
- 110-7726
- Fabrikantnummer:
- BSL215CH6327XTSA1
- Fabrikant:
- Infineon
Wetgeving en conformiteit
Productomschrijving
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N, P |
Maximum Continuous Drain Current | 1.5 A |
Maximum Drain Source Voltage | 20 V |
Series | OptiMOS |
Package Type | TSOP-6 |
Mounting Type | Surface Mount |
Pin Count | 6 |
Maximum Drain Source Resistance | 250 mΩ, 280 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 0.6 V, 1.2V |
Minimum Gate Threshold Voltage | 0.7 V, 1.2V |
Maximum Power Dissipation | 500 mW |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -12 V, +12 V |
Transistor Material | Si |
Length | 2.9mm |
Maximum Operating Temperature | +150 °C |
Width | 1.6mm |
Number of Elements per Chip | 2 |
Typical Gate Charge @ Vgs | 0.73 nC @ 4.5 V, 3 nC @ 5 V |
Height | 1mm |
Forward Diode Voltage | 1.1V |
Minimum Operating Temperature | -55 °C |
- RS-stocknr.:
- 110-7726
- Fabrikantnummer:
- BSL215CH6327XTSA1
- Fabrikant:
- Infineon