- RS-stocknr.:
- 258-0655
- Fabrikantnummer:
- BGA5H1BN6E6327XTSA1
- Fabrikant:
- Infineon
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 18/06/2024, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Per stuk (op een rol 12000)
€ 0,231
(excl. BTW)
€ 0,28
(incl. BTW)
Aantal stuks | Per stuk | Per reel* |
12000 + | € 0,231 | € 2.772,00 |
*prijsindicatie |
- RS-stocknr.:
- 258-0655
- Fabrikantnummer:
- BGA5H1BN6E6327XTSA1
- Fabrikant:
- Infineon
Datasheets
Wetgeving en conformiteit
Productomschrijving
The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.
Low current consumption of 8.5 mA
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
Specificaties
Kenmerk | Waarde |
---|---|
Amplifier Type | Low Noise |
Typical Power Gain | 18.1 dB |
Typical Output Power | 60mW |
Typical Noise Figure | 1.2dB |
Maximum Operating Frequency | 2690 MHz |
Package Type | TSNP-6-10 |
Pin Count | 6 |
- RS-stocknr.:
- 258-0655
- Fabrikantnummer:
- BGA5H1BN6E6327XTSA1
- Fabrikant:
- Infineon