Infineon EB 2ED2410 3D 1BCSP MOSFET Gate Driver for Gate Driver, Power MOSFET for 2ED2410-EM 24 V Evaluation Motherboard
- RS-stocknr.:
- 273-2060
- Fabrikantnummer:
- EB2ED24103D1BCSPTOBO1
- Fabrikant:
- Infineon
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 19/08/2024, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Per stuk
€ 101,98
(excl. BTW)
€ 123,40
(incl. BTW)
Aantal stuks | Per stuk |
1 - 1 | € 101,98 |
2 - 4 | € 99,28 |
5 - 9 | € 96,74 |
10 + | € 94,32 |
- RS-stocknr.:
- 273-2060
- Fabrikantnummer:
- EB2ED24103D1BCSPTOBO1
- Fabrikant:
- Infineon
Datasheets
Wetgeving en conformiteit
Productomschrijving
EiceDRIVER™ APD 2ED2410-EM - 24 V evaluation MOSFET daughterboard, common source, pre-charging
This daughterboard belongs to a family of evaluation boards that can be combined with the 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M). These daughterboards are used to address different MOSFET and shunt arrangements typically found in modern automotive power distributions for 12 and 24 V board nets.
This daughterboard EB 2ED2410 3D 1BCDP is addressing one load channel and consisting of two 60 V OptiMOSTM5 power MOSFET (1.1 mOhm) in a back2back common source configuration. In addition, the load could be pre-charged with a dedicated pre-charge path.
This daughterboard EB 2ED2410 3D 1BCDP is addressing one load channel and consisting of two 60 V OptiMOSTM5 power MOSFET (1.1 mOhm) in a back2back common source configuration. In addition, the load could be pre-charged with a dedicated pre-charge path.
Following other daughterboards are available:
EB 2ED2410 3D 1BCS:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt
EB 2ED2410 3D 1BCD:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt
EB 2ED2410 3D 1BCDP:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt, with pre-charging
EB 2ED2410 3D 1BCD:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt
EB 2ED2410 3D 1BCDP:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt, with pre-charging
Summary of Features
Suitable for 12 and 24 V board nets
Combination with 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M)
0,5 mOhm shunt resistor
60 V OptiMOSTM5 power MOSFET (1,1 Ohm) suitable for 12 and 24 V board nets
MOSFET temperature monitoring with NTC resistors
Dedicated pre-charge path for loads with high input capacitance
Nominal current up to 20 A continuous or 30 A for 10 min
Combination with 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M)
0,5 mOhm shunt resistor
60 V OptiMOSTM5 power MOSFET (1,1 Ohm) suitable for 12 and 24 V board nets
MOSFET temperature monitoring with NTC resistors
Dedicated pre-charge path for loads with high input capacitance
Nominal current up to 20 A continuous or 30 A for 10 min
Specificaties
Kenmerk | Waarde |
---|---|
Power Management Function | MOSFET Gate Driver |
For Use With | 2ED2410-EM 24 V Evaluation Motherboard |
Kit Classification | Evaluation Board |
Featured Device | Gate Driver, Power MOSFET |
Kit Name | EB 2ED2410 3D 1BCSP |
- RS-stocknr.:
- 273-2060
- Fabrikantnummer:
- EB2ED24103D1BCSPTOBO1
- Fabrikant:
- Infineon