- RS-stocknr.:
- 796-5058
- Fabrikantnummer:
- GT30J121
- Fabrikant:
- Toshiba
3 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)
70 op voorraad - levertijd is 3 à 5 werkdagen (UK-voorraad)
Toegevoegd
Prijs Per stuk
€ 3,60
(excl. BTW)
€ 4,36
(incl. BTW)
Aantal stuks | Per stuk |
1 - 24 | € 3,60 |
25 - 49 | € 3,42 |
50 - 199 | € 3,22 |
200 - 399 | € 2,88 |
400 + | € 2,69 |
- RS-stocknr.:
- 796-5058
- Fabrikantnummer:
- GT30J121
- Fabrikant:
- Toshiba
Wetgeving en conformiteit
Productomschrijving
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 30 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 170 W |
Package Type | TO-3P |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.9 x 4.8 x 20mm |
Maximum Operating Temperature | +150 °C |
- RS-stocknr.:
- 796-5058
- Fabrikantnummer:
- GT30J121
- Fabrikant:
- Toshiba