onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount
- RS-stocknr.:
- 166-2138
- Fabrikantnummer:
- ISL9V3040D3ST
- Fabrikant:
- onsemi
Dit product is momenteel niet beschikbaar voor nabestelling.
We hebben dit product helaas niet op voorraad en het is op dit moment niet beschikbaar voor nabestelling.
Toegevoegd
Prijs Per stuk (op een rol 2500)
€ 0,87
(excl. BTW)
€ 1,05
(incl. BTW)
| Aantal stuks | Per stuk | Per reel* |
| 2500 + | € 0,87 | € 2.175,00 |
| *prijsindicatie | ||
- RS-stocknr.:
- 166-2138
- Fabrikantnummer:
- ISL9V3040D3ST
- Fabrikant:
- onsemi
Wetgeving en conformiteit
Productomschrijving
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 21 A |
| Maximum Collector Emitter Voltage | 300 V |
| Maximum Gate Emitter Voltage | ±10V |
| Maximum Power Dissipation | 150 W |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 6.73 x 6.22 x 2.39mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |