- RS-stocknr.:
- 838-6894
- Fabrikantnummer:
- FF200R12KT3EHOSA1
- Fabrikant:
- Infineon
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Toegevoegd
Prijs Per stuk
€ 109,75
(excl. BTW)
€ 132,80
(incl. BTW)
Aantal stuks | Per stuk |
1 - 1 | € 109,75 |
2 - 4 | € 107,56 |
5 + | € 104,25 |
Alternatief
Dit product is momenteel niet beschikbaar. Hierbij onze aanbeveling voor een alternatief product.
- RS-stocknr.:
- 838-6894
- Fabrikantnummer:
- FF200R12KT3EHOSA1
- Fabrikant:
- Infineon
Datasheets
Wetgeving en conformiteit
Productomschrijving
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 295 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 1050 W |
Package Type | 62MM Module |
Configuration | Series |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 7 |
Switching Speed | 1MHz |
Transistor Configuration | Series |
Dimensions | 106.4 x 61.4 x 29mm |
Maximum Operating Temperature | +125 °C |
Minimum Operating Temperature | -40 °C |
- RS-stocknr.:
- 838-6894
- Fabrikantnummer:
- FF200R12KT3EHOSA1
- Fabrikant:
- Infineon