IXYS IXGN320N60A3 Single IGBT Module, 320 A 600 V, 4-Pin SOT-227B, Surface Mount
- RS-stocknr.:
- 125-8046
- Fabrikantnummer:
- IXGN320N60A3
- Fabrikant:
- IXYS
2 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)
10 op voorraad - levertijd is 3 à 5 werkdagen (UK-voorraad)
Toegevoegd
Prijs Per stuk
€ 35,48
(excl. BTW)
€ 42,93
(incl. BTW)
| Aantal stuks | Per stuk |
| 1 - 1 | € 35,48 |
| 2 - 4 | € 30,80 |
| 5 - 9 | € 29,99 |
| 10 - 19 | € 29,20 |
| 20 + | € 28,45 |
- RS-stocknr.:
- 125-8046
- Fabrikantnummer:
- IXGN320N60A3
- Fabrikant:
- IXYS
Wetgeving en conformiteit
Productomschrijving
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 320 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 735 W |
| Package Type | SOT-227B |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 4 |
| Switching Speed | 5kHz |
| Transistor Configuration | Common Emitter |
| Dimensions | 38.23 x 25.07 x 9.6mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
- RS-stocknr.:
- 125-8046
- Fabrikantnummer:
- IXGN320N60A3
- Fabrikant:
- IXYS